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INTEGRATED CIRCUITS
DATA SHEET
CGY2014ATW GSM/DCS/PCS power amplifier
Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
FEATURES * Operates at 3.6 V battery supply voltage * Power Amplifier (PA) output power: 35 dBm in GSM band and 32.5 dBm in DCS/PCS band * Input power: 5 dBm in GSM band and DCS/PCS band * Wide operating temperature range from Tamb = -20 to +85 C * HTSSOP20 exposed die pad package. APPLICATIONS * Dual-band systems: Low Band (LB) from 880 to 915 MHz hand-held transceivers for E-GSM and High Band (HB) from 1710 to 1910 MHz for DCS/PCS applications. QUICK REFERENCE DATA SYMBOL VDD IDD(LB) Po(LB)(max) IDD(HB) Po(HB)(max) Tamb supply voltage GSM positive peak supply current maximum output power in GSM band DCS/PCS positive peak supply current maximum output power in DCS/PCS band ambient temperature PARAMETER MIN. - - 34.5 - 32 -20 GENERAL DESCRIPTION
CGY2014ATW
The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier. The circuit is specifically designed to operate at 3.6 V battery supply voltage. The power amplifier requires only a 30 dB harmonic low-pass filter to comply with the transmit spurious specification. The voltages applied on pins VDD (drain) control the power of the power amplifier and enable it to be switched off.
TYP. 3.5 2 35 1.5 32.5 -
MAX. 5.2 - - - - +85
UNIT V A dBm A dBm C
ORDERING INFORMATION TYPE NUMBER CGY2014ATW PACKAGE NAME HTSSOP20 DESCRIPTION plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm VERSION SOT527-1
2000 Nov 28
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Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
BLOCK DIAGRAM
CGY2014ATW
handbook, full pagewidth
GND1(LB) 8 RFI(LB) 9 1, 10, 12, 16, 19
VDD1(LB) 7
VDD2(LB) 6 13, 14 11 RFO/VDD3(LB) VGLB
n.c.
CGY2014ATW
GND RFI(HB) 15 2 20 17, 18 VGHB RFO/VDD3(HB)
3
4, 5
FCA196
VDD1(HB) VDD2(HB)
Fig.1 Block diagram.
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Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
PINNING SYMBOL n.c. RFI(HB) VDD1(HB) VDD2(HB) VDD2(HB) VDD2(LB) VDD1(LB) GND1(LB) RFI(LB) n.c. VGLB n.c. RFO/VDD3(LB) RFO/VDD3(LB) GND n.c. RFO/VDD3(HB) RFO/VDD3(HB) n.c. VGHB - PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 exposed die not connected DCS/PCS power amplifier input DCS/PCS first stage supply voltage DCS/PCS second stage supply voltage DCS/PCS second stage supply voltage GSM second stage supply voltage GSM first stage supply voltage GSM first stage ground GSM power amplifier input not connected GSM power amplifier gates not connected DESCRIPTION
CGY2014ATW
GSM power amplifier output and third stage supply voltage GSM power amplifier output and third stage supply voltage ground internal connection to ground; pin should not be connected to the board DCS/PCS power amplifier output and third stage supply voltage DCS/PCS power amplifier output and third stage supply voltage not connected DCS/PCS power amplifier gates ground FUNCTIONAL DESCRIPTION Operating conditions
handbook, halfpage
n.c. 1 RFI(HB) 2 VDD1(HB) 3 VDD2(HB) 4 VDD2(HB) 5
20 VGHB 19 n.c. 18 RFO/VDD3(HB) 17 RFO/VDD3(HB) 16 n.c.
The CGY2014ATW is designed to meet the European Telecommunications Standards Institute (ETSI) GSM documents, the "ETS 300 577 specification", which are defined as follows: * ton = 570 s * T = 4.16 ms * Duty cycle = 1/8. Multislot operation can be implemented provided that the application circuit does not drive the IC beyond the limiting values. Power amplifier The GSM and DCS/PCS power amplifiers consist of three cascaded gain stages with an open-drain configuration. Each drain has to be loaded externally by an adequate reactive circuit which also has to be a DC path to the supply. 4
CGY2014ATW
VDD2(LB) 6 VDD1(LB) 7 GND1(LB) 8 RFI(LB) 9 n.c. 10
FCA197
15 GND 14 RFO/VDD3(LB) 13 RFO/VDD3(LB) 12 n.c. 11 VGLB
Fig.2 Pin configuration.
2000 Nov 28
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDD Tj(max) Tstg Ptot Pi(LB) Pi(HB) Note supply voltage maximum operating junction temperature storage temperature total power dissipation GSM input power DCS/PCS input power note 1 PARAMETER CONDITIONS 5.2 150 150 2.0 10 10
CGY2014ATW
MAX. V C C W dBm dBm
UNIT
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment; see Application Note (tbf). THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Note 1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment; see Application Note (tbf). DC CHARACTERISTICS VDD = 3.5 V; Tamb = 25 C; measured on the Philips application diagram (see Fig.3); general operating conditions applied; peak current values measured during burst; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT PARAMETER thermal resistance from junction to case CONDITIONS note 1 VALUE 30 UNIT K/W
Supplies: pins VDD1(LB), VDD2(LB), RFO/VDD3(LB), VDD1(HB), VDD2(HB) and RFO/VDD3(HB) VDD IDD(LB) IDD(HB) IDD(lp)(LB) IDD(lp)(HB) Notes 1. The supply circuit includes a (drain) MOS switch with RDSon = 40 m. The battery voltage is 3.6 V (typical). 2. VDD1(LB) = 2.8 V; VDD1(LB) adjusted for Po(LB) = 15 dBm, this adjustment is typically 0.5V. 3. VDD1(HB) = 2.8 V; VDD1(HB) adjusted for Po(HB) = 15 dBm, this adjustment is typically 0.6V. supply voltage GSM positive peak supply current DCS/PCS positive peak supply current GSM positive supply current DCS/PCS positive supply current note 1 Pi(LB) = 5 dBm Pi(HB) = 5 dBm note 2 note 3 0 - - - - 3.5 2 1.5 200 200 5.2 - - 300 300 V A A mA mA
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Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
AC CHARACTERISTICS VDD1 = 2.8 V; VDD2 = VDD3 = 3.5 V; Tamb = 25 C; measured on the Philips application diagram (see Fig.3). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Low band: GSM power amplifier Pi(LB) fRF(LB) Po(LB)(max) LB Po(LB)(min) NRX(LB) input power RF frequency range maximum output power efficiency minimum output power output noise in RX band VDD = 0 V; Pi(LB) = 5 dBm Pi(LB) = 5 dBm fRF = 925 to 935 MHz fRF = 935 to 960 MHz H2LB H3LB StabLB Pi(HB) fRF(HB) Po(HB)(max) HB Po(HB)(min) HB 2nd harmonic level 3rd harmonic level stability Pi(LB) = 5 dBm Pi(LB) = 5 dBm Pi(LB) = 5 dBm; note 1 - - - - - 3 for DCS operation 1710 32 38 VDD = 0 V; Pi(HB) = 5 dBm VDD(LB) = 3.5 V; Pi(LB) = 5 dBm; VDD(HB) = 0 V; Pi(HB) = 5 dBm; note 3 Pi(HB) = 5 dBm Pi(HB) = 5 dBm Pi(HB) = 5 dBm Pi(HB) = 5 dBm; note 1 - - - - - - - 5 - 32.5 40 -30 0 -117 -129 -35 -35 -60 7 1785 - - - - dBm/Hz dBm/Hz dBc dBc dBc 3 880 34.5 50 - 5 - 35 55 -30 7 915 - - - dBm MHz dBm % dBm
High band: DCS/PCS power amplifier; note 2 input power RF frequency range maximum output power efficiency minimum output power high band isolation when low band is operating output noise in RX band 2nd harmonic level 3rd harmonic level stability dBm MHz dBm % dBm dBm
NRX(HB) H2HB H3HB StabHB Notes
- - - -
- - - -
-121 -35 -35 -60
dBm/Hz dBc dBc dBc
1. The device is adjusted to provide nominal load power into a 50 load. The device is switched off and a 6 : 1 load replaces the 50 load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period. 2. The power amplifier can be matched to PCS and/or DCS/PCS operation through optimization of the matching circuit; see Application Note (tbf). 3. Isolation can be improved to -20 dBm (typical) with a pin diode switched in the DCS output matching circuit.
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Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
APPLICATION INFORMATION
CGY2014ATW
handbook, full pagewidth
optional circuit 2.7 pF RFout DCS
Vd23DCS 10 nF TRL9 RFinDCS 3.9 nH TRL1 100 pF 4.7 pF 100 pF VDD2(HB) 100 pF 3.3 nH 100 pF TRL8 3.3 pF VDD2(LB) VDD1(LB) GND1(LB) 8 RFinGSM RFI(LB) n.c. 9 10 n.c. RFI(HB) VDD1(HB) TRL7 VDD2(HB) 1 2 3 4 5 6 7 20 19 18 17 16 VGHB n.c. TRL2 BA891
5.6 pF
220 33 nF TRL3
3.3 k Vpin
Vd1DCS
RFO/VDD3(HB) RFO/VDD3(HB) 3 pF n.c.(1) GND RFO/VDD3(LB) RFO/VDD3(LB) TRL4
2.7 pF RFout DCS 1 pF
CGY2014ATW
15 14 13 12 11
Vd1GSM
TRL5 100 pF
n.c. VGLB 220 33 nF 4.7 pF 9.1 pF
FCA203
RFout GSM
Vd23GSM 1 nF
TRL10 56 pF
TRL6
4 pF
(1) Pin 16 is internally connected to ground and should not be connected to the board. (2) Transmission lines: Thickness 0.4 mm, substrate FR4 and r = 4.7. TRL1: width = 500 m, length = 4.5 mm. TRL2: width = 500 m, length = 15 mm, thickness = 1.6 mm. TRL3: width = 300 m, length = 32 mm. TRL4: width = 350 m, length = 4 mm. TRL5: width = 800 m, length = 1.5 mm. TRL6: width = 450 m, length = 13 mm. TRL7: width = 500 m, length = 2.5 mm. TRL8: width = 300 m, length = 2.5 mm. TRL9: width = 800 m, length = 5 mm. TRL10: width = 450 m, length = 2 mm.
Fig.3 Application diagram.
2000 Nov 28
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Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
PACKAGE OUTLINE
CGY2014ATW
HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm
SOT527-1
D
E
A
X
c y heathsink side HE vMA
Z
Dh
20
11
pin 1 index
Eh
A2 A1
(A 3)
A
Lp L
1
e bp
10
wM detail X
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.10 A1 0.15 0.05 A2 0.95 0.80 A3 0.25 bp 0.30 0.19 c 0.20 0.09 D(1) 6.6 6.4 Dh 4.3 4.1 E(2) 4.5 4.3 Eh 3.1 2.9 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.50 v 0.2 w 0.13 y 0.1 Z(1) 0.5 0.2 8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT527-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-11-12 00-07-12
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Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 220 C for thick/large packages, and below 235 C for small/thin packages. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed.
CGY2014ATW
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
Suitability of surface mount IC packages for wave and reflow soldering methods
CGY2014ATW
SOLDERING METHOD PACKAGE WAVE BGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. not suitable not not not suitable(2) recommended(3)(4) recommended(5) suitable REFLOW(1) suitable suitable suitable suitable suitable
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Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
CGY2014ATW
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 Nov 28
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Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 70
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403506/01/pp12
Date of release: 2000
Nov 28
Document order number:
9397 750 07456

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